Tailoring deep level surface defects in ZnO nanorods for high sensitivity ammonia gas sensing

Suranan Anantachaisilp; Siwaporn Meejoo Smith; Cuong Ton-That; Tanakorn Osotchan; Anthony R. Moon; Matthew R. Phillips

doi:10.1021/jp5085857

Tailoring deep level surface defects in ZnO nanorods for high sensitivity ammonia gas sensing

Suranan Anantachaisilp
, Siwaporn Meejoo Smith
, Cuong Ton-That
, Tanakorn Osotchan
, Anthony R. Moon
, Matthew R. Phillips

University of Technology Sydney
Mahidol University

Research output: Contribution to journal › Article › peer-review

70 Citations (Scopus)

Abstract

The influence of deep level surface defects on electrical and gas sensing properties of ZnO nanorods NH₃(g) sensors was studied. ZnO nanorods 50-60 nm in diameter were synthesized via low-temperature hydrothermal growth at 90°C on sapphire substrates. The as-grown nanorods exhibited a cathodoluminescence (CL) peak centered at 1.90 eV (YL), attributed to Li_Zn deep acceptors or O interstitials. Subsequent annealing in O₂ at 1 atm and Zn vapor at 650°C produced broad CL peaks centered at 1.70 eV (RL) and 2.44 eV (GL), respectively. The RL and GL have been ascribed to acceptor-like V_Zn and donor-like V_O related centers, respectively. Electrical and gas sensing measurements established that the NH₃ gas response sensitivity was 22.6 for O₂ anneal (RL), 1.4 for Zn vapor anneal (GL), and 4.1 for the as-grown (YL) samples. Additionally, treatment in H-plasma quenched the RL and inverted the NH₃ electrical response due to the incorporation of H donors. Changes in the gas sensing response are explained by a shift in the position of the ZnO Fermi level relative to the chemical potential of NH₃ gas due to the creation of near surface donor or acceptors. These data confirm that ZnO nanorods arrays can be tailored to detect specific gas species. (Chemical Equation Presented).

Original language	English
Pages (from-to)	27150-27156
Number of pages	7
Journal	Journal of Physical Chemistry C
Volume	118
Issue number	46
DOIs	https://doi.org/10.1021/jp5085857
Publication status	Published - 20 Nov 2014
Externally published	Yes

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@article{68e0e71d74e64a52848ac0d57e4d484d,

title = "Tailoring deep level surface defects in ZnO nanorods for high sensitivity ammonia gas sensing",

abstract = "The influence of deep level surface defects on electrical and gas sensing properties of ZnO nanorods NH3(g) sensors was studied. ZnO nanorods 50-60 nm in diameter were synthesized via low-temperature hydrothermal growth at 90°C on sapphire substrates. The as-grown nanorods exhibited a cathodoluminescence (CL) peak centered at 1.90 eV (YL), attributed to LiZn deep acceptors or O interstitials. Subsequent annealing in O2 at 1 atm and Zn vapor at 650°C produced broad CL peaks centered at 1.70 eV (RL) and 2.44 eV (GL), respectively. The RL and GL have been ascribed to acceptor-like VZn and donor-like VO related centers, respectively. Electrical and gas sensing measurements established that the NH3 gas response sensitivity was 22.6 for O2 anneal (RL), 1.4 for Zn vapor anneal (GL), and 4.1 for the as-grown (YL) samples. Additionally, treatment in H-plasma quenched the RL and inverted the NH3 electrical response due to the incorporation of H donors. Changes in the gas sensing response are explained by a shift in the position of the ZnO Fermi level relative to the chemical potential of NH3 gas due to the creation of near surface donor or acceptors. These data confirm that ZnO nanorods arrays can be tailored to detect specific gas species. (Chemical Equation Presented).",

author = "Suranan Anantachaisilp and Smith, \{Siwaporn Meejoo\} and Cuong Ton-That and Tanakorn Osotchan and Moon, \{Anthony R.\} and Phillips, \{Matthew R.\}",

note = "Publisher Copyright: {\textcopyright} 2014 American Chemical Society.",

year = "2014",

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doi = "10.1021/jp5085857",

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T1 - Tailoring deep level surface defects in ZnO nanorods for high sensitivity ammonia gas sensing

AU - Anantachaisilp, Suranan

AU - Smith, Siwaporn Meejoo

AU - Ton-That, Cuong

AU - Osotchan, Tanakorn

AU - Moon, Anthony R.

AU - Phillips, Matthew R.

PY - 2014/11/20

Y1 - 2014/11/20

N2 - The influence of deep level surface defects on electrical and gas sensing properties of ZnO nanorods NH3(g) sensors was studied. ZnO nanorods 50-60 nm in diameter were synthesized via low-temperature hydrothermal growth at 90°C on sapphire substrates. The as-grown nanorods exhibited a cathodoluminescence (CL) peak centered at 1.90 eV (YL), attributed to LiZn deep acceptors or O interstitials. Subsequent annealing in O2 at 1 atm and Zn vapor at 650°C produced broad CL peaks centered at 1.70 eV (RL) and 2.44 eV (GL), respectively. The RL and GL have been ascribed to acceptor-like VZn and donor-like VO related centers, respectively. Electrical and gas sensing measurements established that the NH3 gas response sensitivity was 22.6 for O2 anneal (RL), 1.4 for Zn vapor anneal (GL), and 4.1 for the as-grown (YL) samples. Additionally, treatment in H-plasma quenched the RL and inverted the NH3 electrical response due to the incorporation of H donors. Changes in the gas sensing response are explained by a shift in the position of the ZnO Fermi level relative to the chemical potential of NH3 gas due to the creation of near surface donor or acceptors. These data confirm that ZnO nanorods arrays can be tailored to detect specific gas species. (Chemical Equation Presented).

AB - The influence of deep level surface defects on electrical and gas sensing properties of ZnO nanorods NH3(g) sensors was studied. ZnO nanorods 50-60 nm in diameter were synthesized via low-temperature hydrothermal growth at 90°C on sapphire substrates. The as-grown nanorods exhibited a cathodoluminescence (CL) peak centered at 1.90 eV (YL), attributed to LiZn deep acceptors or O interstitials. Subsequent annealing in O2 at 1 atm and Zn vapor at 650°C produced broad CL peaks centered at 1.70 eV (RL) and 2.44 eV (GL), respectively. The RL and GL have been ascribed to acceptor-like VZn and donor-like VO related centers, respectively. Electrical and gas sensing measurements established that the NH3 gas response sensitivity was 22.6 for O2 anneal (RL), 1.4 for Zn vapor anneal (GL), and 4.1 for the as-grown (YL) samples. Additionally, treatment in H-plasma quenched the RL and inverted the NH3 electrical response due to the incorporation of H donors. Changes in the gas sensing response are explained by a shift in the position of the ZnO Fermi level relative to the chemical potential of NH3 gas due to the creation of near surface donor or acceptors. These data confirm that ZnO nanorods arrays can be tailored to detect specific gas species. (Chemical Equation Presented).

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ER -

Tailoring deep level surface defects in ZnO nanorods for high sensitivity ammonia gas sensing

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