TY - GEN
T1 - Spectral analysis of a high-power infrared silicon light emitting diode of dressed photons
AU - Thubthimthong, Borriboon
AU - Kawazoe, Tadashi
AU - Ohtsu, Motoichi
N1 - Publisher Copyright:
© 2017 OSA.
PY - 2017
Y1 - 2017
N2 - We investigated infrared photon emission mechanisms in the Si light-emitting diode fabricated by dressed-photon-phonon-Assisted annealing. Photoluminescence measurements indicated that triple optical phonons played an important role in the high-power infrared emission of 200 mW.
AB - We investigated infrared photon emission mechanisms in the Si light-emitting diode fabricated by dressed-photon-phonon-Assisted annealing. Photoluminescence measurements indicated that triple optical phonons played an important role in the high-power infrared emission of 200 mW.
UR - https://www.scopus.com/pages/publications/85136440435
M3 - Conference contribution
AN - SCOPUS:85136440435
T3 - Optics InfoBase Conference Papers
BT - Laser Applications Conference, LAC 2017
PB - Optica Publishing Group (formerly OSA)
T2 - Laser Applications Conference, LAC 2017
Y2 - 1 October 2017 through 5 October 2017
ER -