Skip to main navigation Skip to search Skip to main content

Spectral analysis of a high-power infrared silicon light emitting diode of dressed photons

  • University of Tokyo
  • Tokyo Denki University
  • Nanophotonics Engineering Organization

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We investigated infrared photon emission mechanisms in the Si light-emitting diode fabricated by dressed-photon-phonon-Assisted annealing. Photoluminescence measurements indicated that triple optical phonons played an important role in the high-power infrared emission of 200 mW.

Original languageEnglish
Title of host publicationLaser Applications Conference, LAC 2017
PublisherOptica Publishing Group (formerly OSA)
ISBN (Electronic)9780960038077
Publication statusPublished - 2017
Externally publishedYes
EventLaser Applications Conference, LAC 2017 - Nagoya, Japan
Duration: 1 Oct 20175 Oct 2017

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceLaser Applications Conference, LAC 2017
Country/TerritoryJapan
CityNagoya
Period1/10/175/10/17

Fingerprint

Dive into the research topics of 'Spectral analysis of a high-power infrared silicon light emitting diode of dressed photons'. Together they form a unique fingerprint.

Cite this