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Relationship between electrical properties and structure for modified poly(3-hexylthiophene) copolymer thin films

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Relationship between the changing in structure and the electrical properties of modified poly(3-hexylthiophene) (P3HT) was examined. For modified P3HT two types of acceptor molecules including 1,4-Bis(5-brothien-2-yl)-2,3,5,6- tetrafluoro benzene (TFT) and 2,1,3-benzothiadiazole (Bz) were added into the main chain of P3HT. These modifications have the effect to molecular ordering of modified polymer thin film. The structural and optical characteristics of modified polymer were investigated by X-ray diffraction (XRD) and UV-visible absorption spectroscopy. By comparing to characteristic of pristine P3HT, the XRD pattern of modified polymer showed the shift of diffraction peak with decrease in intensity. These indicate that modified polymer chain reduced in structural coplanarity and crystallinity. Since the electrical property relates to the morphology and structure of thin film, the I-V characteristic of modified polymer thin film was measured with aluminum electrode and the results show the decrease in current relative to that in pristine P3HT. Furthermore, the mobility of modified polymer was also evaluated by using time of flight measurement with the structure of ITO/modified P3HT/Al at room temperature. The measured mobilities of modified is agree well with the I-V characteristics and this can demonstrate the effect of molecular ordering on its carrier conduction.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages226-227
Number of pages2
DOIs
Publication statusPublished - 2010
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 3 Jan 20108 Jan 2010

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Conference

Conference2010 3rd International Nanoelectronics Conference, INEC 2010
Country/TerritoryChina
CityHongkong
Period3/01/108/01/10

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