TY - GEN
T1 - Organic light emitting devices using 9,10-bis (dodecylthio)anthracene as a new emitting material
AU - Wanitchang, Piangkhwan
AU - Sahasithiwat, Somboon
AU - Nerungsi, Chakkrapan
AU - Thongpanchang, Tienthong
AU - Kerdcharoen, Teerakiat
PY - 2009
Y1 - 2009
N2 - Organic light emitting devices have been fabricated using a new anthracene derivative; 9,10-bis(dodecylthio) anthracene (ADT). In this paper, ADT was used as dopant and emitter in PVK host matrix by spin-coating the layers of the doped polymer onto the cleaned indium tin oxide coated glass (ITO) / 3,4-polyethylene-dioxythiophene:polystyrene sulfonate (PEDOT:PSS) substrates. At room temperature the electroluminescence, centered at ∼475 nm, is delivered with the highest maximum current efficiency of 0.28 cd/A at 9 V and highest maximum luminance of 318 cd/m2 at 11.5 V from the PVK:ADT 30wt% device. CIE coordinate of devices was shifted from (0.16,0.13) to (0.16,0.26) for PVK:ADT 0.5wt% and 40wt% devices, respectively. Therefore, this material can be used as a new emitting material.
AB - Organic light emitting devices have been fabricated using a new anthracene derivative; 9,10-bis(dodecylthio) anthracene (ADT). In this paper, ADT was used as dopant and emitter in PVK host matrix by spin-coating the layers of the doped polymer onto the cleaned indium tin oxide coated glass (ITO) / 3,4-polyethylene-dioxythiophene:polystyrene sulfonate (PEDOT:PSS) substrates. At room temperature the electroluminescence, centered at ∼475 nm, is delivered with the highest maximum current efficiency of 0.28 cd/A at 9 V and highest maximum luminance of 318 cd/m2 at 11.5 V from the PVK:ADT 30wt% device. CIE coordinate of devices was shifted from (0.16,0.13) to (0.16,0.26) for PVK:ADT 0.5wt% and 40wt% devices, respectively. Therefore, this material can be used as a new emitting material.
KW - Anthracene derivative
KW - Doped devices
KW - Electroluminescence
KW - Organic light emitting devices
UR - https://www.scopus.com/pages/publications/70350055034
U2 - 10.1109/ECTICON.2009.5137042
DO - 10.1109/ECTICON.2009.5137042
M3 - Conference contribution
AN - SCOPUS:70350055034
SN - 9781424433889
T3 - 2009 6th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, ECTI-CON 2009
SP - 436
EP - 439
BT - 2009 6th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, ECTI-CON 2009
T2 - 2009 6th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, ECTI-CON 2009
Y2 - 6 May 2009 through 9 May 2009
ER -