TY - GEN
T1 - NBTI in FinFET Circuits under the Temperature Effect Inversion
AU - Sootkaneung, Warin
AU - Lapamonpinyo, Pipatphon
AU - Chookaew, Sasithorn
AU - Howimanporn, Suppachai
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2017/7/14
Y1 - 2017/7/14
N2 - FinFET technology has increasingly been adopted for use within integrated circuits thanks to its superior electrical integrity and scalability. However, most recent studies have concluded that FinFET circuits tend to be more vulnerable to negative bias temperature instability (NBTI) compared to planar MOSFET designs as a result of the self-heating effect. In this paper, we contrarily reveal that under strong NBTI stress from increased temperature, the temperature effect inversion (TEI) in small nanometer FinFET devices significantly improves the circuit performance. From experimental results, at high temperature, the TEI impact dominates the delay degradation due to NBTI causing almost all of the experimental FinFET circuits to run faster.
AB - FinFET technology has increasingly been adopted for use within integrated circuits thanks to its superior electrical integrity and scalability. However, most recent studies have concluded that FinFET circuits tend to be more vulnerable to negative bias temperature instability (NBTI) compared to planar MOSFET designs as a result of the self-heating effect. In this paper, we contrarily reveal that under strong NBTI stress from increased temperature, the temperature effect inversion (TEI) in small nanometer FinFET devices significantly improves the circuit performance. From experimental results, at high temperature, the TEI impact dominates the delay degradation due to NBTI causing almost all of the experimental FinFET circuits to run faster.
KW - FinFET
KW - delay degradation
KW - negative bias temperature instability (NBTI)
KW - particle swarm optimization (PSO)
KW - temperature effect inversion (TEI)
UR - https://www.scopus.com/pages/publications/85010202877
U2 - 10.1109/CSE-EUC-DCABES.2016.206
DO - 10.1109/CSE-EUC-DCABES.2016.206
M3 - Conference contribution
AN - SCOPUS:85010202877
T3 - Proceedings - 19th IEEE International Conference on Computational Science and Engineering, 14th IEEE International Conference on Embedded and Ubiquitous Computing and 15th International Symposium on Distributed Computing and Applications to Business, Engineering and Science, CSE-EUC-DCABES 2016
SP - 343
EP - 350
BT - Proceedings - 19th IEEE International Conference on Computational Science and Engineering, 14th IEEE International Conference on Embedded and Ubiquitous Computing and 15th International Symposium on Distributed Computing and Applications to Business, Engineering and Science, CSE-EUC-DCABES 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 19th IEEE International Conference on Computational Science and Engineering, 14th IEEE International Conference on Embedded and Ubiquitous Computing and 15th International Symposium on Distributed Computing and Applications to Business, Engineering and Science, CSE-EUC-DCABES 2016
Y2 - 24 August 2016 through 26 August 2016
ER -