Magnetoresistance in epitaxially grown MnAs films on GaAs substrates

Takashi Manago; Asawin Sinsarp; Hiro Akinaga

doi:10.1063/1.2763984

Magnetoresistance in epitaxially grown MnAs films on GaAs substrates

Takashi Manago
, Asawin Sinsarp
, Hiro Akinaga

Tokyo University of Science, Yamaguchi
Natl. Inst. Adv. Indust. Sci. T.

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Magnetotransport properties of epitaxially grown MnAs (1- 100) films on GaAs(001) substrates were investigated. The thickness of the films was adjusted to 250 nm, which is the characteristic thickness for showing a clear ladder-type magnetic domain structure. The broad magnetoresistance (MR) behaviors depend on the magnetic field directions, and they follow the magnetization process well. Detailed investigation of MR in low magnetic fields along the magnetic easy axis revealed that the additional MR effect around 0 T depends on the current direction. The MR in low magnetic fields reflects the characteristic domain structures of the MnAs films.

Original language	English
Article number	033920
Journal	Journal of Applied Physics
Volume	102
Issue number	3
DOIs	https://doi.org/10.1063/1.2763984
Publication status	Published - 2007
Externally published	Yes

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10.1063/1.2763984

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abstract = "Magnetotransport properties of epitaxially grown MnAs (1- 100) films on GaAs(001) substrates were investigated. The thickness of the films was adjusted to 250 nm, which is the characteristic thickness for showing a clear ladder-type magnetic domain structure. The broad magnetoresistance (MR) behaviors depend on the magnetic field directions, and they follow the magnetization process well. Detailed investigation of MR in low magnetic fields along the magnetic easy axis revealed that the additional MR effect around 0 T depends on the current direction. The MR in low magnetic fields reflects the characteristic domain structures of the MnAs films.",

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AU - Sinsarp, Asawin

AU - Akinaga, Hiro

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N2 - Magnetotransport properties of epitaxially grown MnAs (1- 100) films on GaAs(001) substrates were investigated. The thickness of the films was adjusted to 250 nm, which is the characteristic thickness for showing a clear ladder-type magnetic domain structure. The broad magnetoresistance (MR) behaviors depend on the magnetic field directions, and they follow the magnetization process well. Detailed investigation of MR in low magnetic fields along the magnetic easy axis revealed that the additional MR effect around 0 T depends on the current direction. The MR in low magnetic fields reflects the characteristic domain structures of the MnAs films.

AB - Magnetotransport properties of epitaxially grown MnAs (1- 100) films on GaAs(001) substrates were investigated. The thickness of the films was adjusted to 250 nm, which is the characteristic thickness for showing a clear ladder-type magnetic domain structure. The broad magnetoresistance (MR) behaviors depend on the magnetic field directions, and they follow the magnetization process well. Detailed investigation of MR in low magnetic fields along the magnetic easy axis revealed that the additional MR effect around 0 T depends on the current direction. The MR in low magnetic fields reflects the characteristic domain structures of the MnAs films.

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Magnetoresistance in epitaxially grown MnAs films on GaAs substrates

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