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Investigation of the use of rotating linearly polarized light for characterizing SiO2 thin-film on Si substrate

  • Mahidol University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This research is based on the Fresnel's equations and the ellipsometric technique that investigate the sample of SiO2 thinfilm on Si substrate. The investigation is made by a probing beam which is in the form of a rotating linearly polarized light generated by the polarizing Mach-Zehnder interferometer (pMZi). The detection of the changed polarization states of the incident light due to reflection on the sample surfaces led to a set of unique characteristics describing a thin-film substrate system in terms of ellipsometric parameters ψ and Δ. SiO2 thin-films were chosen to study because of their well known characteristics. The accuracy of measurements was confirmed by comparisons to calculated values derived from Fresnel's equations and a standard instrument. The results clearly reveal a feasibility of using the rotating linearly polarized light produced by pMZi for a non-destructive characterization of the thin-film system.

Original languageEnglish
Title of host publicationAsia Communications and Photonics Conference and Exhibition, ACP 2011
Publication statusPublished - 2011
Externally publishedYes
EventAsia Communications and Photonics Conference and Exhibition, ACP 2011 - Shanghai, China
Duration: 13 Nov 2011 → 16 Nov 2011

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceAsia Communications and Photonics Conference and Exhibition, ACP 2011
Country/TerritoryChina
CityShanghai
Period13/11/11 → 16/11/11

Keywords

  • Ellipsometric parameters
  • Ellipsometric technique
  • Polarizing mach- zehnder interferometer.
  • Rotating linearly polarized light

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