InGaAlAs/InAlAs multiple quantum-well structures grown by molecular beam epitaxy for long wavelength infrared detection

D. H. Zhang; W. M. Zhang; P. H. Zhang; T. Osotchan; S. F. Yoon; X. Shi; R. Liu; T. S. Wee

doi:10.1117/12.369396

InGaAlAs/InAlAs multiple quantum-well structures grown by molecular beam epitaxy for long wavelength infrared detection

D. H. Zhang
, W. M. Zhang
, P. H. Zhang
, T. Osotchan
, S. F. Yoon
, X. Shi
, R. Liu
, T. S. Wee

Nanyang Technological University

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report the fabrication and characterization of the n-type InGaAlAs/InAlAs multiple quantum well structures, lattice-matched to InP, for the long wavelength infrared detection. It is found that strong absorption resulted from the intersubband transition in the quaternary material is observable and the wavelength of the absorption varies with the well width while the barrier width is kept unchanged. Our experimental results are in good agreement with the theoretical estimation based on simple finite barrier model and can be confirmed by the photoluminescence data.

Original language	English
Pages (from-to)	183-190
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3899
DOIs	https://doi.org/10.1117/12.369396
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures - Singapore, Singapore Duration: 1 Dec 1999 → 3 Dec 1999

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@article{d8a6cc26540c46b9880744c78bd65fad,

title = "InGaAlAs/InAlAs multiple quantum-well structures grown by molecular beam epitaxy for long wavelength infrared detection",

abstract = "We report the fabrication and characterization of the n-type InGaAlAs/InAlAs multiple quantum well structures, lattice-matched to InP, for the long wavelength infrared detection. It is found that strong absorption resulted from the intersubband transition in the quaternary material is observable and the wavelength of the absorption varies with the well width while the barrier width is kept unchanged. Our experimental results are in good agreement with the theoretical estimation based on simple finite barrier model and can be confirmed by the photoluminescence data.",

author = "Zhang, \{D. H.\} and Zhang, \{W. M.\} and Zhang, \{P. H.\} and T. Osotchan and Yoon, \{S. F.\} and X. Shi and R. Liu and Wee, \{T. S.\}",

year = "1999",

doi = "10.1117/12.369396",

language = "English",

volume = "3899",

pages = "183--190",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1999 Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures ; Conference date: 01-12-1999 Through 03-12-1999",

}

TY - JOUR

T1 - InGaAlAs/InAlAs multiple quantum-well structures grown by molecular beam epitaxy for long wavelength infrared detection

AU - Zhang, D. H.

AU - Zhang, W. M.

AU - Zhang, P. H.

AU - Osotchan, T.

AU - Yoon, S. F.

AU - Shi, X.

AU - Liu, R.

AU - Wee, T. S.

PY - 1999

Y1 - 1999

N2 - We report the fabrication and characterization of the n-type InGaAlAs/InAlAs multiple quantum well structures, lattice-matched to InP, for the long wavelength infrared detection. It is found that strong absorption resulted from the intersubband transition in the quaternary material is observable and the wavelength of the absorption varies with the well width while the barrier width is kept unchanged. Our experimental results are in good agreement with the theoretical estimation based on simple finite barrier model and can be confirmed by the photoluminescence data.

AB - We report the fabrication and characterization of the n-type InGaAlAs/InAlAs multiple quantum well structures, lattice-matched to InP, for the long wavelength infrared detection. It is found that strong absorption resulted from the intersubband transition in the quaternary material is observable and the wavelength of the absorption varies with the well width while the barrier width is kept unchanged. Our experimental results are in good agreement with the theoretical estimation based on simple finite barrier model and can be confirmed by the photoluminescence data.

UR - https://www.scopus.com/pages/publications/0033332427

U2 - 10.1117/12.369396

DO - 10.1117/12.369396

M3 - Conference article

AN - SCOPUS:0033332427

SN - 0277-786X

VL - 3899

SP - 183

EP - 190

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1999 Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures

Y2 - 1 December 1999 through 3 December 1999

ER -

InGaAlAs/InAlAs multiple quantum-well structures grown by molecular beam epitaxy for long wavelength infrared detection

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