Electron mobility in InO.53GaO.47As as a function of concentration and temperature

V. W.L. Chin; T. Osotchan; T. L. Tansley

doi:10.1016/0026-2692(95)00010-F

Electron mobility in In_O.53Ga_O.47As as a function of concentration and temperature

V. W.L. Chin
, T. Osotchan
, T. L. Tansley

Macquarie University

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The electron mobility in In_0.53Ga_0.47As as a function of temperature has been calculated by the variational principle over a carrier concentration range of 1 × 10¹⁴ to 1 × 10¹⁸ cm^-3 with compensation ratio as a parameter. We show that these results, which fit experimental data, can be well represented by a simple analytical function. We also give the fit coefficients for this expression as a function of temperature for various compensation ratios which may facilitate device modelling.

Original language	English
Pages (from-to)	653-657
Number of pages	5
Journal	Microelectronics Journal
Volume	26
Issue number	7
DOIs	https://doi.org/10.1016/0026-2692(95)00010-F
Publication status	Published - Oct 1995
Externally published	Yes

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title = "Electron mobility in InO.53GaO.47As as a function of concentration and temperature",

abstract = "The electron mobility in In0.53Ga0.47As as a function of temperature has been calculated by the variational principle over a carrier concentration range of 1 × 1014 to 1 × 1018 cm-3 with compensation ratio as a parameter. We show that these results, which fit experimental data, can be well represented by a simple analytical function. We also give the fit coefficients for this expression as a function of temperature for various compensation ratios which may facilitate device modelling.",

author = "Chin, \{V. W.L.\} and T. Osotchan and Tansley, \{T. L.\}",

year = "1995",

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T1 - Electron mobility in InO.53GaO.47As as a function of concentration and temperature

AU - Chin, V. W.L.

AU - Osotchan, T.

AU - Tansley, T. L.

PY - 1995/10

Y1 - 1995/10

N2 - The electron mobility in In0.53Ga0.47As as a function of temperature has been calculated by the variational principle over a carrier concentration range of 1 × 1014 to 1 × 1018 cm-3 with compensation ratio as a parameter. We show that these results, which fit experimental data, can be well represented by a simple analytical function. We also give the fit coefficients for this expression as a function of temperature for various compensation ratios which may facilitate device modelling.

AB - The electron mobility in In0.53Ga0.47As as a function of temperature has been calculated by the variational principle over a carrier concentration range of 1 × 1014 to 1 × 1018 cm-3 with compensation ratio as a parameter. We show that these results, which fit experimental data, can be well represented by a simple analytical function. We also give the fit coefficients for this expression as a function of temperature for various compensation ratios which may facilitate device modelling.

UR - https://www.scopus.com/pages/publications/0029389967

U2 - 10.1016/0026-2692(95)00010-F

DO - 10.1016/0026-2692(95)00010-F

M3 - Article

AN - SCOPUS:0029389967

SN - 0026-2692

VL - 26

SP - 653

EP - 657

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 7

ER -

Electron mobility in In_O.53Ga_O.47As as a function of concentration and temperature

Abstract

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