TY - GEN
T1 - A modified voltage-clamped ISFET readout circuit for low voltage applications
AU - Thanapitak, Surachoke
AU - Sawigun, Chutham
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/11/3
Y1 - 2017/11/3
N2 - This paper present an ISFET readout circuit which is operated at 0.8 V supply and senses pH on both current and voltage accurately. This readout circuit requires one gate-source voltage and two drain-source voltage to operate in the weak inversion region. The power consumption at pH 7 is 2.5 nW. The output voltage of this readout circuit tracks with pH linearly while its current output is the exponential function to pH. The simulation results are conducted on a 0.35μm standard CMOS process.
AB - This paper present an ISFET readout circuit which is operated at 0.8 V supply and senses pH on both current and voltage accurately. This readout circuit requires one gate-source voltage and two drain-source voltage to operate in the weak inversion region. The power consumption at pH 7 is 2.5 nW. The output voltage of this readout circuit tracks with pH linearly while its current output is the exponential function to pH. The simulation results are conducted on a 0.35μm standard CMOS process.
UR - https://www.scopus.com/pages/publications/85039916773
U2 - 10.1109/ECTICon.2017.8096191
DO - 10.1109/ECTICon.2017.8096191
M3 - Conference contribution
AN - SCOPUS:85039916773
T3 - ECTI-CON 2017 - 2017 14th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology
SP - 135
EP - 138
BT - ECTI-CON 2017 - 2017 14th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 14th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, ECTI-CON 2017
Y2 - 27 June 2017 through 30 June 2017
ER -